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<p>A P-type semiconductor namely CuSbSe<sub>2</sub> developed in the recent times has acquired a lot of attention because of its low cost promising optoelectronic features and widely abundant precursor elements. This study explores CuSbSe<sub>2</sub> photodetector based on a microrod designed with the help of simple separation approach from crystals which have 150–300&#xa0;μm thickness. In comparison to thin film-based device (D1), microrod-based device (D2) performs more efficiently as it is more responsive and operates in a self-bias manner. D2 displayed an enhanced responsivity with a value of 0.27&#xa0;A/W with 31% of EQE (External Quantum Efficiency) at 1064&#xa0;nm wavelength and 15&#xa0;mW/cm<sup>2</sup> power density. Moreover 532&#xa0;nm, 0.038&#xa0;A/W responsivity with 9% EQE was achieved by D2 under 32&#xa0;mW/cm<sup>2</sup>. The time taken by D2 to respond or recover at 1064&#xa0;nm was 68.7 and 35.1&#xa0;ms and at 532&#xa0;nm was 15.7 and 41.2&#xa0;ms. This operation is self-powered and is implemented at 0.02&#xa0;V which is a lower value of bias. The findings of this research will be reveal that microrods of CuSbSe<sub>2</sub> offer significantly enhanced performance and responds at a faster pace with higher sensitivity. The above properties find them apt for low cost, self-powered optoelectronic applications.</p>

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A microrod-based photoconductivity enhancement in copper antimony selenide PIN photodetector

  • 期刊论文

  • 发表日期：

    2025年4月21日

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  • M. Irshad Ahamed,
  • M. Suganthi Priya,
  • Salahaldeen Duraibi,
  • Saahira Banu Ahamed

摘要

A P-type semiconductor namely CuSbSe2 developed in the recent times has acquired a lot of attention because of its low cost promising optoelectronic features and widely abundant precursor elements. This study explores CuSbSe2 photodetector based on a microrod designed with the help of simple separation approach from crystals which have 150–300 μm thickness. In comparison to thin film-based device (D1), microrod-based device (D2) performs more efficiently as it is more responsive and operates in a self-bias manner. D2 displayed an enhanced responsivity with a value of 0.27 A/W with 31% of EQE (External Quantum Efficiency) at 1064 nm wavelength and 15 mW/cm2 power density. Moreover 532 nm, 0.038 A/W responsivity with 9% EQE was achieved by D2 under 32 mW/cm2. The time taken by D2 to respond or recover at 1064 nm was 68.7 and 35.1 ms and at 532 nm was 15.7 and 41.2 ms. This operation is self-powered and is implemented at 0.02 V which is a lower value of bias. The findings of this research will be reveal that microrods of CuSbSe2 offer significantly enhanced performance and responds at a faster pace with higher sensitivity. The above properties find them apt for low cost, self-powered optoelectronic applications.