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<p>In the current work, the melting point method synthesized five ternary Ge–S–Ga alloys. The focus of this study was to investigate the impact of Gallium's partial sulfur replacement on the electrical conductivity of the alloys. Electrical measurements were performed for the Ge<sub>35</sub>S<sub>65-<i>x</i></sub>Ga<sub><i>x</i></sub> ternary alloy system, with <i>x</i> value set at 0, 6, 12, 18, and 24 at%. It was found that in all experimental samples, the dark conductivity (<i>σ</i><sub>dc</sub>) increases as temperature rises. Electrical conductivity analyses showed that the samples exhibited semiconductor behavior, with three regions in the electrical conductivity curve at high, low, and medium temperatures. The pre-exponential factors and activation energies were determined for each of the three conduction regions. These parameters were evaluated for each Gallium content based on electrical conductivity observations as a function of temperature. It was found that all samples were affected by the increase in Gallium percentage in the alloy. Numerical analysis of the conductivity equation was also performed to calculate the extended, localized, and Fermi level density states. The results showed that all samples change with increasing Gallium concentration. The surface morphology of the alloys was studied using SEM (Scanning Electron Microscopy), which revealed a decrease in sizes, the formation of new phases, and smaller grain sizes compared to the sample with partial compensation that did not include cadmium. Additionally, energy dispersive X-ray spectroscopy (EDX) of the five samples confirm complete agreement between the composition of the samples and their nominal proportions, including cadmium.</p>

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Impact of partial sulfur substitution with gallium on the structural and electrical properties of Ge₃₅S65-xGax semiconductor alloys

  • 期刊论文

  • 发表日期：

    2025年4月11日

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  • Kareem Ali Jasim,
  • Kassim Mahdi Wadi,
  • Hawbash H. Karim,
  • Ibrahim Nazem Qader

摘要

In the current work, the melting point method synthesized five ternary Ge–S–Ga alloys. The focus of this study was to investigate the impact of Gallium's partial sulfur replacement on the electrical conductivity of the alloys. Electrical measurements were performed for the Ge35S65-xGax ternary alloy system, with x value set at 0, 6, 12, 18, and 24 at%. It was found that in all experimental samples, the dark conductivity (σdc) increases as temperature rises. Electrical conductivity analyses showed that the samples exhibited semiconductor behavior, with three regions in the electrical conductivity curve at high, low, and medium temperatures. The pre-exponential factors and activation energies were determined for each of the three conduction regions. These parameters were evaluated for each Gallium content based on electrical conductivity observations as a function of temperature. It was found that all samples were affected by the increase in Gallium percentage in the alloy. Numerical analysis of the conductivity equation was also performed to calculate the extended, localized, and Fermi level density states. The results showed that all samples change with increasing Gallium concentration. The surface morphology of the alloys was studied using SEM (Scanning Electron Microscopy), which revealed a decrease in sizes, the formation of new phases, and smaller grain sizes compared to the sample with partial compensation that did not include cadmium. Additionally, energy dispersive X-ray spectroscopy (EDX) of the five samples confirm complete agreement between the composition of the samples and their nominal proportions, including cadmium.