Synthesis of GaSe nanoflorets for highly responsive and fast response self-powered visible photodetectors
摘要
This work presents a self-powered visible photodetector using GaSe nanoflorets (NFs) on a SiO2 substrate deposited with a chemical vapor deposition technique. The fabricated device demonstrates self-powered photodetection with an ultra-high responsivity of 1580 mA/W, high detectivity of 4.41 × 1010 Jones, and an ultra-low noise equivalent power of 3.06 × 10−13 WHz−1/2 under 625-nm light irradiation. In addition, the device also reached a high EQE of 5.5 × 102% with a fast response speed of 34/35 ms. The high surface-to-volume ratio of the GaSe NFs boosts their photodetection efficiency, which makes them ideal for self-powered visible photodetectors. Furthermore, the performance of the device remained remarkably consistent for 2 months. This study paves the way for developing optoelectronic applications based on GaSe devices, which are capable of self-powering and exhibit high performance in visible-light photodetection.