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<p>In this study, novel yellow-emitting La<sub>3</sub>Ga<sub>5</sub>SnO<sub>14</sub> phosphors doped with different concentrations of Dy<sup>3+</sup> ions were first obtained via high-temperature solid-state reaction. The crystal structure, phase purity, morphological features, photoluminescence (PL) properties, thermal stability, and luminescence decay curves of the resulting phosphors were characterized. Under the excitation of 350 nm, three dominant emission peaks of the La<sub>3</sub>Ga<sub>5</sub>SnO<sub>14</sub>:Dy<sup>3+</sup> centered at 479 (<sup>4</sup>F<sub>9/2</sub>–<sup>6</sup>H<sub>15/2</sub>), 573 (<sup>4</sup>F<sub>9/2</sub>–<sup>6</sup>H<sub>13/2</sub>), and 666 nm (<sup>4</sup>F<sub>9/2</sub>–<sup>6</sup>H<sub>11/2</sub>). The optimal doping concentration of Dy<sup>3+</sup> ions in the La<sub>3</sub>Ga<sub>5</sub>SnO<sub>14</sub>:<i>x</i>Dy<sup>3+</sup> phosphors was <i>x</i> = 20 mol%. The prepared La<sub>3</sub>Ga<sub>5</sub>SnO<sub>14</sub>:20 mol%Dy<sup>3+</sup> phosphor had excellent thermal stability with temperature quenching temperature (T<sub>0.5</sub> &gt; 480 K) and high activation energy (<i>E</i><sub>a</sub> = 0.17 eV). Revealing its potential as yellow-emitting phosphors, the feasibility of the fabricated La<sub>3</sub>Ga<sub>5</sub>SnO<sub>14</sub>:Dy<sup>3+</sup> phosphors were confirmed for w-LEDs.</p>

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Synthesis and luminescence properties of novel stannate La3Ga5SnO14 doped with Dy3+ ions phosphors for white light-emitting devices

  • 期刊论文

  • 发表日期：

    2025年4月4日

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  • Yanhua Lei,
  • Meili Yang,
  • Anlin Zhang,
  • Huapeng Sun,
  • Bin Deng

摘要

In this study, novel yellow-emitting La3Ga5SnO14 phosphors doped with different concentrations of Dy3+ ions were first obtained via high-temperature solid-state reaction. The crystal structure, phase purity, morphological features, photoluminescence (PL) properties, thermal stability, and luminescence decay curves of the resulting phosphors were characterized. Under the excitation of 350 nm, three dominant emission peaks of the La3Ga5SnO14:Dy3+ centered at 479 (4F9/2–6H15/2), 573 (4F9/2–6H13/2), and 666 nm (4F9/2–6H11/2). The optimal doping concentration of Dy3+ ions in the La3Ga5SnO14:xDy3+ phosphors was x = 20 mol%. The prepared La3Ga5SnO14:20 mol%Dy3+ phosphor had excellent thermal stability with temperature quenching temperature (T0.5 > 480 K) and high activation energy (Ea = 0.17 eV). Revealing its potential as yellow-emitting phosphors, the feasibility of the fabricated La3Ga5SnO14:Dy3+ phosphors were confirmed for w-LEDs.