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<p>Through-silicon vias (TSVs) and through-dielectric vias (TDVs) are essential components in 2.5D silicon interposers, where electromigration (EM) poses a significant reliability concern. This study investigates the electromigration behavior of TSVs and TDVs within 2.5D interposers. Two distinct test structures were fabricated and subjected to electromigration testing. The results indicate that TSVs exhibit superior resistance to electromigration compared to TDVs. Failure analysis (FA) using SEM/TEM techniques and simulation with COMSOL Multiphysics software were employed. The findings confirm that electromigration is the primary cause of failure in TDV structures.</p>

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Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • Fa Wu,
  • Hao Li,
  • Wei Cui,
  • Guangyin Liu,
  • Lun Zhang,
  • Yang Feng,
  • Saiyu Yang,
  • Qin Tang,
  • Pan Wang,
  • Jun Shen,
  • Zhaohuan Tang

摘要

Through-silicon vias (TSVs) and through-dielectric vias (TDVs) are essential components in 2.5D silicon interposers, where electromigration (EM) poses a significant reliability concern. This study investigates the electromigration behavior of TSVs and TDVs within 2.5D interposers. Two distinct test structures were fabricated and subjected to electromigration testing. The results indicate that TSVs exhibit superior resistance to electromigration compared to TDVs. Failure analysis (FA) using SEM/TEM techniques and simulation with COMSOL Multiphysics software were employed. The findings confirm that electromigration is the primary cause of failure in TDV structures.