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<p>In this study, the radio frequency magnetron sputtering system was used to deposit aluminum-doped zinc oxide (AZO) thin films, a systematic method of optimizing the internal structure of the film by changing the atmosphere during the process, and then optimizing the porous structure by changing the atmosphere to roughen the film surface is being studied. First, the amounts of nitrogen and argon introduced during the film fabrication process were adjusted to enhance the internal and surface porosities of AZO films. Subsequently, the duration of oxygen plasma etching was adjusted following film fabrication to increase the film surface roughness and enhance its sensitivity for CO reactions. A self-designed gas sensing circuit was employed to examine the gas sensing characteristics in a low-operating-temperature environment of 100&#xa0;°C. Additionally, low-angle X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy and high-resolution transmission electron microscope were used to analyze the crystallinity of the AZO film and its surface microstructure after film fabrication but before packaging. The film’s light absorption rate was also measured using an ultraviolet/visible spectrometer to indirectly verify the porosity characteristics of the AZO film surface. The results revealed that the AZO film deposited under the conditions of a nitrogen flow rate of 3&#xa0;sccm, argon flow rate of 30&#xa0;sccm, and a sputtering power of 175&#xa0;W and subsequently etched with an oxygen flow rate of 40&#xa0;sccm and etching power of 100&#xa0;W for 30&#xa0;s exhibited superior CO-sensing properties. The film was highly sensitive and demonstrated an almost instantaneous response during gas sensing, and its highest response value increased from 1.0115 to 1.048. In summary, modifying the ambient atmosphere during film fabrication effectively increases the sensitivity and response of the resulting AZO films to CO gas reactions.</p>

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Optimizing process of aluminum-doped zinc oxide thin films by modifying fabrication atmospheres to apply on CO gas sensing

  • 期刊论文

  • 发表日期：

    2025年3月31日

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  • Yen-Sheng Lin,
  • Fang-Jun Lin

摘要

In this study, the radio frequency magnetron sputtering system was used to deposit aluminum-doped zinc oxide (AZO) thin films, a systematic method of optimizing the internal structure of the film by changing the atmosphere during the process, and then optimizing the porous structure by changing the atmosphere to roughen the film surface is being studied. First, the amounts of nitrogen and argon introduced during the film fabrication process were adjusted to enhance the internal and surface porosities of AZO films. Subsequently, the duration of oxygen plasma etching was adjusted following film fabrication to increase the film surface roughness and enhance its sensitivity for CO reactions. A self-designed gas sensing circuit was employed to examine the gas sensing characteristics in a low-operating-temperature environment of 100 °C. Additionally, low-angle X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy and high-resolution transmission electron microscope were used to analyze the crystallinity of the AZO film and its surface microstructure after film fabrication but before packaging. The film’s light absorption rate was also measured using an ultraviolet/visible spectrometer to indirectly verify the porosity characteristics of the AZO film surface. The results revealed that the AZO film deposited under the conditions of a nitrogen flow rate of 3 sccm, argon flow rate of 30 sccm, and a sputtering power of 175 W and subsequently etched with an oxygen flow rate of 40 sccm and etching power of 100 W for 30 s exhibited superior CO-sensing properties. The film was highly sensitive and demonstrated an almost instantaneous response during gas sensing, and its highest response value increased from 1.0115 to 1.048. In summary, modifying the ambient atmosphere during film fabrication effectively increases the sensitivity and response of the resulting AZO films to CO gas reactions.