<p>As the miniaturization of electronic devices continues to advance, increasingly stringent demands are placed on the grain refinement of BaTiO<sub>3</sub> (BTO) functional ceramics. In this study, a single-step high-pressure sintering process was employed to rapidly fabricate nanoscale BTO ceramics. Through precise control of temperature and pressure, the abnormal grain growth was effectively suppressed during the sintering process, successfully mitigating the cleavage damage and the dielectric loss typically associated with columnar grains. Under the optimized sintering conditions of 600&#xa0;°C and 2.0&#xa0;GPa for 5&#xa0;min, BTO ceramics exhibited an average grain size of 168&#xa0;nm, which was an increase of 77% compared to the starting powder. The dielectric constant reached 2310 and the dielectric loss was 0.06. This work provides an effective reference for the rapid fabrication and microstructural control of nanoceramics.</p>

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Microstructure regulation and dielectric performance analysis of the high-pressure sintered nano-BaTiO₃ ceramics

  • Jing Wang,
  • Zhanwen Ye,
  • Yulian Liang,
  • Ling Zhou

摘要

As the miniaturization of electronic devices continues to advance, increasingly stringent demands are placed on the grain refinement of BaTiO3 (BTO) functional ceramics. In this study, a single-step high-pressure sintering process was employed to rapidly fabricate nanoscale BTO ceramics. Through precise control of temperature and pressure, the abnormal grain growth was effectively suppressed during the sintering process, successfully mitigating the cleavage damage and the dielectric loss typically associated with columnar grains. Under the optimized sintering conditions of 600 °C and 2.0 GPa for 5 min, BTO ceramics exhibited an average grain size of 168 nm, which was an increase of 77% compared to the starting powder. The dielectric constant reached 2310 and the dielectric loss was 0.06. This work provides an effective reference for the rapid fabrication and microstructural control of nanoceramics.