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<p>The pure and aluminium (Al) doped titanium oxide (TiO<sub>2</sub>) and nickel oxide (NiO) thin films were prepared by chemical bath deposition. The films were prepared for different aluminium concentrations, i.e., 2%, 4%, 6% and 8%, respectively. The XRD patterns of the Al-doped TiO<sub>2</sub> and NiO films showed hexagonal and cubic phases with polycrystalline. The crystallite size of the films was varied with Al doping. The absorbance of the films was improved with aluminium doping for TiO2 and NiO films. The bandgap of the films ranged m 3.1 to 2.8&#xa0;eV for TiO<sub>2</sub> and 3.7&#xa0;eV to 3.3&#xa0;eV for NiO with aluminium doping. In both films, the electrical resistivity and carrier concentration varied with the aluminium doping concentration.</p>

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Structural, optical and electrical properties of Al-doped TiO2 and NiO thin films synthesized via chemical bath deposition

  • 期刊论文

  • 发表日期：

    2025年3月24日

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  • Dibya Mohan Badamali,
  • Kalash Kumari,
  • Sahana Nagappa Moger,
  • P. Puneeth Kumar,
  • P. Praveen Prakash Dsouza,
  • V. K. Ashith

摘要

The pure and aluminium (Al) doped titanium oxide (TiO2) and nickel oxide (NiO) thin films were prepared by chemical bath deposition. The films were prepared for different aluminium concentrations, i.e., 2%, 4%, 6% and 8%, respectively. The XRD patterns of the Al-doped TiO2 and NiO films showed hexagonal and cubic phases with polycrystalline. The crystallite size of the films was varied with Al doping. The absorbance of the films was improved with aluminium doping for TiO2 and NiO films. The bandgap of the films ranged m 3.1 to 2.8 eV for TiO2 and 3.7 eV to 3.3 eV for NiO with aluminium doping. In both films, the electrical resistivity and carrier concentration varied with the aluminium doping concentration.