Scholarlink

<p>The development of high-efficiency silicon heterojunction (SHJ) solar cells is primarily dependent on optimizing interface recombination losses (J<sub>0</sub>) and series resistance components (R<sub>s</sub>), which critically influence the cell's fill factor (FF). The hole-selective p-a-Si:H/ITO contact is optimized by coupling the graded boron-doped a-Si:H and indium tin oxide (ITO) layers’ electronic properties for low J<sub>0</sub> and contact resistance (ρ<sub>c</sub>). The graded p-a-Si:H layer enabled a low defective interface at the n-type c-Si wafer, which has been investigated through J<sub>0</sub> at various stages of device fabrication<b>.</b> The carrier transport modification was analyzed by evaluating the J–V characteristics of the cell obtained under light, dark, and Suns-Voc conditions. The diode quality factor (n<sub>1</sub> ~ 0.89 &lt; 1), derived from the linear portion of the Suns-Voc characteristics of an optimized cell, indicates that within the voltage range of 0.60 to 0.75&#xa0;V (near open-circuit voltage), the characteristics are somewhat affected by Auger recombination processes. This effect aids in achieving a higher fill factor (FF) than what is typically constrained by Shockley–Read–Hall recombination. With the optimized p-a-Si:H/ITO contact compared to the baseline cell process, the pseudo-FF enhanced from ~ 81.2% to ~ 85.1% (represents recombination and shunt losses), and the FF enhanced from ~ 75.1% to ~ 81.8% (due to reduced ρ<sub>c</sub> of i + p/ITO from ~ 756 mΩ-cm<sup>2</sup> to ~ 406 mΩ-cm<sup>2</sup>), over all the cell efficiency has enhanced from ~ 21.0 to ~ 23.3%.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Fill factor enhancement with graded interface hole-selective contact for silicon heterojunction solar cells: impact of recombination losses and contact resistivity

  • 期刊论文

  • 发表日期：

    2025年3月19日

查看全文
  • Shrestha Bhattacharya,
  • Shahnawaz Alam,
  • Ashutosh Pandey,
  • Silajit Manna,
  • Son Pal Singh,
  • Vamsi Krishna Komarala

摘要

The development of high-efficiency silicon heterojunction (SHJ) solar cells is primarily dependent on optimizing interface recombination losses (J0) and series resistance components (Rs), which critically influence the cell's fill factor (FF). The hole-selective p-a-Si:H/ITO contact is optimized by coupling the graded boron-doped a-Si:H and indium tin oxide (ITO) layers’ electronic properties for low J0 and contact resistance (ρc). The graded p-a-Si:H layer enabled a low defective interface at the n-type c-Si wafer, which has been investigated through J0 at various stages of device fabrication. The carrier transport modification was analyzed by evaluating the J–V characteristics of the cell obtained under light, dark, and Suns-Voc conditions. The diode quality factor (n1 ~ 0.89 < 1), derived from the linear portion of the Suns-Voc characteristics of an optimized cell, indicates that within the voltage range of 0.60 to 0.75 V (near open-circuit voltage), the characteristics are somewhat affected by Auger recombination processes. This effect aids in achieving a higher fill factor (FF) than what is typically constrained by Shockley–Read–Hall recombination. With the optimized p-a-Si:H/ITO contact compared to the baseline cell process, the pseudo-FF enhanced from ~ 81.2% to ~ 85.1% (represents recombination and shunt losses), and the FF enhanced from ~ 75.1% to ~ 81.8% (due to reduced ρc of i + p/ITO from ~ 756 mΩ-cm2 to ~ 406 mΩ-cm2), over all the cell efficiency has enhanced from ~ 21.0 to ~ 23.3%.