<p>0.8Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>(BNT)–0.2Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>(BKT) ceramics co-doped with Al<sub>2</sub>O<sub>3</sub> and TeO<sub>2</sub> (BNT-BKT-<i>x</i>AT) were prepared using conventional solid-state-reaction method. X-ray diffraction (XRD) analysis of samples with doping concentrations <i>x</i> ≤ 0.10 confirmed a pure perovskite phase, with relative densities over 95%. The sample with <i>x</i> = 0.05 exhibited better dielectric, ferroelectric and piezoelectric performances, i.e., a dielectric constant of 4900 at 1 kHz, a coercive electric field (<i>E</i><sub><i>c</i></sub>) of 42.8&#xa0;kV/cm, remanent polarization (<i>P</i><sub><i>r</i></sub>) of 31.8&#xa0;µC/cm<sup>2</sup>, saturation polarization (<i>P</i><sub><i>s</i></sub>) of 45.8&#xa0;µC/cm<sup>2</sup>, and a piezoelectric coefficient (<i>d</i><sub>33</sub>) of 160 pC/N. Increasing the doping concentration resulted in a rise in the phase transition temperature. Moreover, at a higher doping level (<i>x</i> = 0.16), the samples exhibited semiconducting behavior, i.e., a temperature-dependent electrical resistivity. These findings indicate that such Al/Te co-doped BNT-BNT ceramics, particularly with <i>x</i> = 0.05 and <i>x</i> = 0.16, are promising candidates for piezoelectric and temperature sensing applications.</p>

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Preparation and electrical properties of Al and Te co-doped BNT-BKT ceramics

  • Jinling Zeng,
  • Zixuan Wang,
  • Yingbang Yao

摘要

0.8Bi0.5Na0.5TiO3(BNT)–0.2Bi0.5K0.5TiO3(BKT) ceramics co-doped with Al2O3 and TeO2 (BNT-BKT-xAT) were prepared using conventional solid-state-reaction method. X-ray diffraction (XRD) analysis of samples with doping concentrations x ≤ 0.10 confirmed a pure perovskite phase, with relative densities over 95%. The sample with x = 0.05 exhibited better dielectric, ferroelectric and piezoelectric performances, i.e., a dielectric constant of 4900 at 1 kHz, a coercive electric field (Ec) of 42.8 kV/cm, remanent polarization (Pr) of 31.8 µC/cm2, saturation polarization (Ps) of 45.8 µC/cm2, and a piezoelectric coefficient (d33) of 160 pC/N. Increasing the doping concentration resulted in a rise in the phase transition temperature. Moreover, at a higher doping level (x = 0.16), the samples exhibited semiconducting behavior, i.e., a temperature-dependent electrical resistivity. These findings indicate that such Al/Te co-doped BNT-BNT ceramics, particularly with x = 0.05 and x = 0.16, are promising candidates for piezoelectric and temperature sensing applications.