<p>The single-phase ceramic sample (1-<i>x</i>)Ba(Ti<sub>0.8</sub>Zr<sub>0.2</sub>)O<sub>3</sub>-<i>x</i>(Ba<sub>0.7</sub>Ca<sub>0.3</sub>)TiO<sub>3</sub> (<i>x</i> = 0.4 and 0.6) was prepared using a solid-state reaction method.&#xa0;The prepared sample shows mixed phase of the tetragonal and rhombohedral crystal structure from XRD. The phase transition from tetragonal to rhombohedral is caused by the red shifting of the vibration B<sub>1</sub>/E(TO<sub>3</sub>)/E(LO<sub>2</sub>) mode at low temperatures Raman study. Further, the permittivity and electrical conductivity values show the presence of a three-phase transition between Rhombohedral-orthorhombic around ~ 50&#xa0;°C orthorhombic-tetragonal at around ~ 250&#xa0;°C and tetragonal-cubic at about ~ 350&#xa0;°C. The dielectrcic value <i>ε</i><sub>r</sub> = 600 for <i>x</i> = 0.6 and high <i>ε</i><sub>r</sub> = 980 for <i>x</i> = 0.4 at 500&#xa0;°C at low-frequency region and obtained co-exsistence of phases for <i>x</i> = 0.4. The PL spectra showed indications of rhombohedral structure in the sample. So this material could be applicable for the microelectronic devices.</p>

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Investigation on structural, optical, vibrational, and ferroelectric properties of lead-free (1-x)Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 ceramics

  • Sasmita Otta,
  • Rajat Kumar Das,
  • Laxman Kand,
  • Santosh Kumar Parida,
  • Kamal Lochan Mohanta,
  • Binod Kumar Roul,
  • Bhagaban Kisan

摘要

The single-phase ceramic sample (1-x)Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 (x = 0.4 and 0.6) was prepared using a solid-state reaction method. The prepared sample shows mixed phase of the tetragonal and rhombohedral crystal structure from XRD. The phase transition from tetragonal to rhombohedral is caused by the red shifting of the vibration B1/E(TO3)/E(LO2) mode at low temperatures Raman study. Further, the permittivity and electrical conductivity values show the presence of a three-phase transition between Rhombohedral-orthorhombic around ~ 50 °C orthorhombic-tetragonal at around ~ 250 °C and tetragonal-cubic at about ~ 350 °C. The dielectrcic value εr = 600 for x = 0.6 and high εr = 980 for x = 0.4 at 500 °C at low-frequency region and obtained co-exsistence of phases for x = 0.4. The PL spectra showed indications of rhombohedral structure in the sample. So this material could be applicable for the microelectronic devices.