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<p>The Seed-Free Solid-State Crystal Growth (SFSSCG) method, known for its low cost, simple process, and easy to achieve uniform doping and component regulation, has been widely employed in the fabrication of KNN-based single crystals. In this study, a series of (1-<i>x</i>)(0.996K<sub>0.5</sub>Na<sub>0.5</sub>NbO<sub>3</sub>-0.004LiBiO<sub>3</sub>)-<i>x</i>BaZrO<sub>3</sub> (abbreviated as KNN-LB-<i>x</i>BZ, <i>x</i> = 0—0.005) lead-free piezoelectric single crystals were prepared using the SFSSCG method. The effects of the third component BaZrO<sub>3</sub> on the growth, structure, and electrical properties of KNN-LB single crystals were systematically investigated. The results demonstrate that BaZrO<sub>3</sub> doping facilitates the structural transformation of part tetragonal to orthorhombic phases, while preserving the coexistence of both phases. As the doping concentration increases, the crystal surface transforms from smooth to step-like layered appearance, ultimately forming a locally protruded structure, suggesting that appropriate BaZrO<sub>3</sub> doping optimizes the crystal growth mode. Additionally, the doping significantly modifies the domain structure, promoting the refinement of domain walls and spacing in the crystals, which is closely correlated with the enhancement of electrical properties. Notably, at the doping concentration of <i>x</i> = 0.003, the crystals exhibit an optimal electrical and electromechanical coupling performances, such as <i>P</i><sub><i>r</i></sub> = 38 μC/cm<sup>2</sup>, <i>d</i><sub><i>33</i></sub> = 186 pC/N, <i>d</i><sup><i>*</i></sup><sub><i>33</i></sub> = 1098 pm/V, <i>Q</i><sub><i>m</i></sub> = 41.8, <i>k</i><sub><i>t</i></sub> = 0.37, <i>tanδ</i> = 0.042. Furthermore, the doping substantially reduces the leakage current density of the crystals, confirming that a small amount of BaZrO<sub>3</sub> as the third component plays a significant role in improving the fabrication and properties of KNN-based single crystals.</p>

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The role of BaZrO3 as the third component on the growth, structure, and electrical properties of KNN-based lead-free piezoelectric single crystals

  • 期刊论文

  • 发表日期：

    2025年3月18日

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  • Shixuan Cao,
  • Minhong Jiang,
  • Li Lin,
  • Cheng Shuai,
  • Yujiao Ouyang,
  • Yuan Xu,
  • Yujiao Zeng,
  • Jianwei Song,
  • Guanghui Rao

摘要

The Seed-Free Solid-State Crystal Growth (SFSSCG) method, known for its low cost, simple process, and easy to achieve uniform doping and component regulation, has been widely employed in the fabrication of KNN-based single crystals. In this study, a series of (1-x)(0.996K0.5Na0.5NbO3-0.004LiBiO3)-xBaZrO3 (abbreviated as KNN-LB-xBZ, x = 0—0.005) lead-free piezoelectric single crystals were prepared using the SFSSCG method. The effects of the third component BaZrO3 on the growth, structure, and electrical properties of KNN-LB single crystals were systematically investigated. The results demonstrate that BaZrO3 doping facilitates the structural transformation of part tetragonal to orthorhombic phases, while preserving the coexistence of both phases. As the doping concentration increases, the crystal surface transforms from smooth to step-like layered appearance, ultimately forming a locally protruded structure, suggesting that appropriate BaZrO3 doping optimizes the crystal growth mode. Additionally, the doping significantly modifies the domain structure, promoting the refinement of domain walls and spacing in the crystals, which is closely correlated with the enhancement of electrical properties. Notably, at the doping concentration of x = 0.003, the crystals exhibit an optimal electrical and electromechanical coupling performances, such as Pr = 38 μC/cm2, d33 = 186 pC/N, d*33 = 1098 pm/V, Qm = 41.8, kt = 0.37, tanδ = 0.042. Furthermore, the doping substantially reduces the leakage current density of the crystals, confirming that a small amount of BaZrO3 as the third component plays a significant role in improving the fabrication and properties of KNN-based single crystals.