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<p>The mechanisms of conductivity modification of composite films based on polyimide and CuO/Cu<sub>2</sub>O powder of nano- and micron dispersion have been studied. Current–voltage characteristics of samples with different volume ratios of filler and their comparative analysis were carried out. The structures with 20% filler show memristor properties, the structures with 30%—varistor properties, whereas at 40% filler concentration the current–voltage characteristic is linear. The nonlinearity of I–V curve at 20 and 30% CuO/Cu<sub>2</sub>O is explained by the behavior of conductive filaments formed in the dielectric phase during electroforming. The linear type of I–V characteristic of 40% CuO/Cu<sub>2</sub>O composite may be caused by reaching the percolation threshold when stable conductive chains are formed, while the influence of nonlinear effects in the volume and at the phase boundaries is minimal. The results of the work can be used in integrated electronics to form composite functional materials with controllable conductive and dielectric properties, as well as in multilevel wiring and redistribution layers technology.</p>

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Investigation of electrophysical properties of polyimide-CuO/Cu2O composite

  • 期刊论文

  • 发表日期：

    2025年3月7日

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  • A. N. Boyko,
  • M. D. Kochergin,
  • D. V. Vertyanov,
  • D. S. Gaev,
  • I. A. Belyakov,
  • D. V. Pebalk,
  • S. S. Rekhviashvili,
  • S. P. Timoshenkov

摘要

The mechanisms of conductivity modification of composite films based on polyimide and CuO/Cu2O powder of nano- and micron dispersion have been studied. Current–voltage characteristics of samples with different volume ratios of filler and their comparative analysis were carried out. The structures with 20% filler show memristor properties, the structures with 30%—varistor properties, whereas at 40% filler concentration the current–voltage characteristic is linear. The nonlinearity of I–V curve at 20 and 30% CuO/Cu2O is explained by the behavior of conductive filaments formed in the dielectric phase during electroforming. The linear type of I–V characteristic of 40% CuO/Cu2O composite may be caused by reaching the percolation threshold when stable conductive chains are formed, while the influence of nonlinear effects in the volume and at the phase boundaries is minimal. The results of the work can be used in integrated electronics to form composite functional materials with controllable conductive and dielectric properties, as well as in multilevel wiring and redistribution layers technology.