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<p>This study looks at the effects of neodymium oxide (Nd<sub>2</sub>O<sub>3</sub>) nanoparticles doped in the polyvinyl pyrrolidone (PVP) thin film that sits between a metal and a semiconductor on the electrical characteristics and conduction mechanism of Schottky Barrier Diodes (SBDs). A microwave-assisted technique is employed to create the Nd<sub>2</sub>O<sub>3</sub> nanostructure. The processed Nd<sub>2</sub>O<sub>3</sub> nanostructure’s mean crystalline scale, surface morphology, pureness, and optical characteristics are ascertained by X-ray diffraction pattern, Field Emission-Scanning Electron Microscopy, Electron-Dispersive X-ray analysis, and ultraviolet–visible spectroscopy, respectively. By measuring the I–V characteristics at ± 3.8 V and comparing them, the Thermionic Emission, modified Norde technique, and Cheung functions are applied for calculating the main electronic variables of prepared SBDs including the ideality coefficient (<i>n</i>), leak current (<i>I</i><sub>0</sub>), the height measure of electric potential barrier (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_14492_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="29" /> </InlineMediaObject> <EquationSource Format="TEX">\({\Phi }_{B0}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="normal">Φ</mi> <mrow> <mi>B</mi> <mn>0</mn> </mrow> </msub> </math></EquationSource> </InlineEquation>), shunt (<i>R</i><sub>sh</sub>), and series (<i>R</i><sub>s</sub>) resistances. Additionally, the conduction processes of the electric current in positive and negative biases are examined, as well as the surface/trap states density (<i>N</i><sub>ss</sub>) depend on energy at forward bias. It is found that the interfacial layer improves the rectifying ratio by decreasing <i>n</i>, <i>I</i><sub>0</sub>, <i>N</i><sub>ss</sub> and raising BH, shunt resistance (<i>R</i><sub>sh</sub>). For use in nanoscale electrical and optoelectronic devices and circuits, PVP:Nd<sub>2</sub>O<sub>3</sub> thin film can therefore be a good substitute for an interfacial layer.</p>

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Electronic respond of Au/n-Si Schottky barrier diodes with PVP interlayer doped by Nd2O3 particles

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  • 发表日期：

    2025年3月5日

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  • Ferhat Hanife

摘要

This study looks at the effects of neodymium oxide (Nd2O3) nanoparticles doped in the polyvinyl pyrrolidone (PVP) thin film that sits between a metal and a semiconductor on the electrical characteristics and conduction mechanism of Schottky Barrier Diodes (SBDs). A microwave-assisted technique is employed to create the Nd2O3 nanostructure. The processed Nd2O3 nanostructure’s mean crystalline scale, surface morphology, pureness, and optical characteristics are ascertained by X-ray diffraction pattern, Field Emission-Scanning Electron Microscopy, Electron-Dispersive X-ray analysis, and ultraviolet–visible spectroscopy, respectively. By measuring the I–V characteristics at ± 3.8 V and comparing them, the Thermionic Emission, modified Norde technique, and Cheung functions are applied for calculating the main electronic variables of prepared SBDs including the ideality coefficient (n), leak current (I0), the height measure of electric potential barrier ( \({\Phi }_{B0}\) Φ B 0 ), shunt (Rsh), and series (Rs) resistances. Additionally, the conduction processes of the electric current in positive and negative biases are examined, as well as the surface/trap states density (Nss) depend on energy at forward bias. It is found that the interfacial layer improves the rectifying ratio by decreasing n, I0, Nss and raising BH, shunt resistance (Rsh). For use in nanoscale electrical and optoelectronic devices and circuits, PVP:Nd2O3 thin film can therefore be a good substitute for an interfacial layer.