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<p>Modified zirconia ceramics play a crucial role in the development of battery electrodes and gas sensors. However, current research and application efforts have predominantly focused on medium and high temperatures, leaving gaps in our understanding of low-temperature intervals such as room temperature. Here, ZrO<sub>2</sub> ceramics were modified through doping with Sb<sup>3+</sup>/Y<sup>3+</sup>, transforming the synthesized samples from a monoclinic phase at 1250&#xa0;°C to a tetragonal phase after sintering at 1500&#xa0;°C. Hall effect results confirmed that the samples predominantly exhibited a hole conduction mechanism at low temperatures, which transitioned to an ion conduction mechanism with oxygen vacancies as charge carriers as temperature increased. A concise discussion on the conduction mechanism was conducted, and the samples demonstrated semiconductivity (~ 7 × 10<sup>–5</sup> S/m) at 523&#xa0;K, indicating its potential for future semiconductor applications at low and medium temperatures. The effects of thermal cycling and time aging are also discussed.</p>

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Semiconducting and mechanism of Sb2O3/Y2O3-doped zirconia

  • 期刊论文

  • 发表日期：

    2025年3月11日

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  • Muxiang Huang,
  • Xin Nie,
  • Benjin Xu,
  • Xiaokun Huang,
  • Xiangping Jiang

摘要

Modified zirconia ceramics play a crucial role in the development of battery electrodes and gas sensors. However, current research and application efforts have predominantly focused on medium and high temperatures, leaving gaps in our understanding of low-temperature intervals such as room temperature. Here, ZrO2 ceramics were modified through doping with Sb3+/Y3+, transforming the synthesized samples from a monoclinic phase at 1250 °C to a tetragonal phase after sintering at 1500 °C. Hall effect results confirmed that the samples predominantly exhibited a hole conduction mechanism at low temperatures, which transitioned to an ion conduction mechanism with oxygen vacancies as charge carriers as temperature increased. A concise discussion on the conduction mechanism was conducted, and the samples demonstrated semiconductivity (~ 7 × 10–5 S/m) at 523 K, indicating its potential for future semiconductor applications at low and medium temperatures. The effects of thermal cycling and time aging are also discussed.