Scholarlink

<p>A solid-state reaction method was successfully employed to synthesize [(Zn<sub>0.8</sub>Mg<sub>0.2</sub>)<sub>1-x</sub>Ni<sub>x</sub>]<sub>2</sub>SiO<sub>4</sub> microwave dielectric ceramics by partially substituting [Zn<sub>0.8</sub>Mg<sub>0.2</sub>]<sup>2+</sup> with Ni<sup>2+</sup> ions. XRD analysis indicated that the proportion of the primary Zn<sub>2</sub>SiO<sub>4</sub> phase decreases with increasing Ni<sup>2+</sup> content, while the secondary MgNi(SiO<sub>4</sub>) phase becomes predominant. This phase transition contributes to a reduction in dielectric loss. The sintering behavior, phase composition, microstructure, and microwave dielectric properties of the ceramics were systematically investigated. The incorporation of Ni<sup>2+</sup> ions lowered the optimal sintering temperature from 1325 to 1400&#xa0;°C. SEM analysis revealed that an optimal Ni<sup>2+</sup> substitution level enhanced the grain density within the [(Zn<sub>0.8</sub>Mg<sub>0.2</sub>)<sub>1-x</sub>Ni<sub>x</sub>]<sub>2</sub>SiO<sub>4</sub> ceramic matrix. The relationship between Q × f and the average grain size as well as grain uniformity was analyzed. The trend of τ<sub>f</sub> is primarily governed by the total V<sub>izn-o</sub> and E<sub>zn-o</sub>. Additionally, the relationship between lattice vibrations, Raman shifts, and dielectric properties was investigated using Raman spectroscopy. Certainly, the [(Zn<sub>0.8</sub>Mg<sub>0.2</sub>)<sub>0.8</sub>Ni<sub>0.2</sub>]<sub>2</sub>SiO<sub>4</sub> ceramic, sintered at 1325&#xa0;°C, exhibits an exemplary set of microwave dielectric properties: an εr value of 6.8, a Q × f value of 27,185 GHz, and a τ<sub>f</sub> value of −&#xa0;37 ppm/&#xa0;°C.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Microstructure and Raman spectra analysis of [(Zn0.8Mg0.2)1-xNix]2SiO4 microwave dielectric ceramics featuring low relative permittivity and low dielectric loss

  • 期刊论文

  • 发表日期：

    2025年3月5日

查看全文
  • Yuan-Bin Chen,
  • Ling Tang

摘要

A solid-state reaction method was successfully employed to synthesize [(Zn0.8Mg0.2)1-xNix]2SiO4 microwave dielectric ceramics by partially substituting [Zn0.8Mg0.2]2+ with Ni2+ ions. XRD analysis indicated that the proportion of the primary Zn2SiO4 phase decreases with increasing Ni2+ content, while the secondary MgNi(SiO4) phase becomes predominant. This phase transition contributes to a reduction in dielectric loss. The sintering behavior, phase composition, microstructure, and microwave dielectric properties of the ceramics were systematically investigated. The incorporation of Ni2+ ions lowered the optimal sintering temperature from 1325 to 1400 °C. SEM analysis revealed that an optimal Ni2+ substitution level enhanced the grain density within the [(Zn0.8Mg0.2)1-xNix]2SiO4 ceramic matrix. The relationship between Q × f and the average grain size as well as grain uniformity was analyzed. The trend of τf is primarily governed by the total Vizn-o and Ezn-o. Additionally, the relationship between lattice vibrations, Raman shifts, and dielectric properties was investigated using Raman spectroscopy. Certainly, the [(Zn0.8Mg0.2)0.8Ni0.2]2SiO4 ceramic, sintered at 1325 °C, exhibits an exemplary set of microwave dielectric properties: an εr value of 6.8, a Q × f value of 27,185 GHz, and a τf value of − 37 ppm/ °C.