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<p>This article explores the production of BiFeO<sub>3</sub> (BFO) thin films and their exceptional performance in resistive random access memory (RRAM) applications. Employing a straightforward sol–gel method, BFO thin films are precisely deposited on ITO-coated glass substrates, achieving a uniform thickness of 3&#xa0;nm. In the Al/BiFeO<sub>3</sub>/ITO configuration, the BFO RRAM shows excellent retention capabilities, maintaining its performance without significant degradation. The resistive switching behavior of these RRAM devices is primarily attributed to the formation and rupture of metal filaments, driven by the oxidation and reduction of Al ions, crucial for the devices' setting and resetting functions. Notably, these BFO RRAM devices exhibit stable bipolar resistive switching characteristics over more than a hundred cycles, with a resistance ratio (high resistance state to low resistance state) exceeding tenfold. Furthermore, these devices sustain an impressive resistance ratio of about a 100-fold during long-term retention tests lasting over 10,000&#xa0;s, demonstrating remarkable stability. This study underscores the potential of BFO in advancing non-volatile memory technology, suggesting that its stable and efficient performance could significantly transform existing memory storage solutions.</p>

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Resistive switching behavior of perovskite BiFeO3 thin films and their two-bit-per-cell applications

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Shih-Hsiang Chen,
  • Sheng-Joue Young,
  • Chih-Chiang Yang,
  • Yi-Hsing Liu

摘要

This article explores the production of BiFeO3 (BFO) thin films and their exceptional performance in resistive random access memory (RRAM) applications. Employing a straightforward sol–gel method, BFO thin films are precisely deposited on ITO-coated glass substrates, achieving a uniform thickness of 3 nm. In the Al/BiFeO3/ITO configuration, the BFO RRAM shows excellent retention capabilities, maintaining its performance without significant degradation. The resistive switching behavior of these RRAM devices is primarily attributed to the formation and rupture of metal filaments, driven by the oxidation and reduction of Al ions, crucial for the devices' setting and resetting functions. Notably, these BFO RRAM devices exhibit stable bipolar resistive switching characteristics over more than a hundred cycles, with a resistance ratio (high resistance state to low resistance state) exceeding tenfold. Furthermore, these devices sustain an impressive resistance ratio of about a 100-fold during long-term retention tests lasting over 10,000 s, demonstrating remarkable stability. This study underscores the potential of BFO in advancing non-volatile memory technology, suggesting that its stable and efficient performance could significantly transform existing memory storage solutions.