Scholarlink

<p>The ozone treatment is proposed as a simple and versatile process that can be utilized across various fabrication stages to enhance the performance of silicon solar cells. The effectiveness of this treatment on p-type silicon surfaces was examined through the application of ozone dissolved in deionized water (DIO<sub>3</sub>) and the ultraviolet-ozone (UVO<sub>3</sub>) cleaning process prior to the two-step texturization procedure. It was found that the surface with the DIO<sub>3</sub> treatment for 10-min results in a tremendous surface quality on p-type silicon wafer. According to field emission scanning electron microscope (FESEM) micrographs and UV–Visible spectrometer (UV–Vis) measurements, the textured wafer with DIO<sub>3</sub> treatment improves the surface morphology and decreases the front surface reflection. Consequently, the DIO<sub>3</sub> treatments were determined to be optimal, yielding a reflectivity value of less than 12%. The range size and height of the pyramid formed were 1.9–2.0&#xa0;µm and 0.8–1.5&#xa0;µm, respectively. Results from the Atomic Force Microscope (AFM) also confirm the increase in average surface roughness from 203 to 300&#xa0;nm was expected to improve the light absorption. Moreover, this methodology leads to a considerable reduction in surface damage and is applicable to the silicon texturization process utilized in solar cell manufacturing.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancing surface quality of p-type silicon wafers by ozone-assisted two-step texturization

  • 期刊论文

  • 发表日期：

    2025年2月15日

查看全文
  • Mohd Norizam Md Daud,
  • Amin Aadenan,
  • Lim Chin Haw,
  • Najah Syahirah Mohd Nor,
  • Mohd Adib Ibrahim,
  • Mohd Asri Mat Teridi

摘要

The ozone treatment is proposed as a simple and versatile process that can be utilized across various fabrication stages to enhance the performance of silicon solar cells. The effectiveness of this treatment on p-type silicon surfaces was examined through the application of ozone dissolved in deionized water (DIO3) and the ultraviolet-ozone (UVO3) cleaning process prior to the two-step texturization procedure. It was found that the surface with the DIO3 treatment for 10-min results in a tremendous surface quality on p-type silicon wafer. According to field emission scanning electron microscope (FESEM) micrographs and UV–Visible spectrometer (UV–Vis) measurements, the textured wafer with DIO3 treatment improves the surface morphology and decreases the front surface reflection. Consequently, the DIO3 treatments were determined to be optimal, yielding a reflectivity value of less than 12%. The range size and height of the pyramid formed were 1.9–2.0 µm and 0.8–1.5 µm, respectively. Results from the Atomic Force Microscope (AFM) also confirm the increase in average surface roughness from 203 to 300 nm was expected to improve the light absorption. Moreover, this methodology leads to a considerable reduction in surface damage and is applicable to the silicon texturization process utilized in solar cell manufacturing.