Scholarlink

<p>This study entailed the fabrication of a layer structure of a grid electrode metallisation for silicon heterojunction (SHJ) solar cell, consisting of a seed layer of Cu/ TiW/ ITO/ a-Si:H. The interfacial characteristics of the barrier of titanium tungsten alloy (TiW) during damp heat aging (85&#xa0;ºC, 85%rh for 1000&#xa0;h) was investigated. The barrier stability of the TiW layer was evaluated in two-layer structures: TiW/ indium tin oxide (ITO) and seed Cu/ TiW/ ITO. Furthermore, two TiW layer thicknesses of 20 and 100&#xa0;nm were considered. The TiW/ ITO structure was stable. However, the seed Cu/ TiW/ ITO structure exhibited various physical and chemical changes owing to the oxidation of the seed Cu layer. A cuprous oxide phase formed on Cu(111) during damp heat aging, which triggered interdiffusion of TiW toward the seed Cu layer. TiW thickness of 100&#xa0;nm is appropriate for the long-term stability of grid electrode metallisation in SHJ solar cells under damp heat aging.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Interfacial characteristics of seed copper/titanium tungsten alloy/indium tin oxide electrode for silicon heterojunction solar cell under damp heat

  • 期刊论文

  • 发表日期：

    2025年2月12日

查看全文
  • Jae-Seong Jeong

摘要

This study entailed the fabrication of a layer structure of a grid electrode metallisation for silicon heterojunction (SHJ) solar cell, consisting of a seed layer of Cu/ TiW/ ITO/ a-Si:H. The interfacial characteristics of the barrier of titanium tungsten alloy (TiW) during damp heat aging (85 ºC, 85%rh for 1000 h) was investigated. The barrier stability of the TiW layer was evaluated in two-layer structures: TiW/ indium tin oxide (ITO) and seed Cu/ TiW/ ITO. Furthermore, two TiW layer thicknesses of 20 and 100 nm were considered. The TiW/ ITO structure was stable. However, the seed Cu/ TiW/ ITO structure exhibited various physical and chemical changes owing to the oxidation of the seed Cu layer. A cuprous oxide phase formed on Cu(111) during damp heat aging, which triggered interdiffusion of TiW toward the seed Cu layer. TiW thickness of 100 nm is appropriate for the long-term stability of grid electrode metallisation in SHJ solar cells under damp heat aging.