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<p>Herein, chromium oxide (Cr<sub>2</sub>O<sub>3</sub>) was fabricated in nanopowder form, and Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr<sub>2</sub>O<sub>3</sub> powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10<sup>-3</sup>, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_14354_Article_IEq1.gif" Format="GIF" Height="24" Rendition="HTML" Resolution="72" Type="Linedraw" Width="28" /> </InlineMediaObject> <EquationSource Format="TEX">\({\text{E}}_{\text{g}}^{\text{Op}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mtext>E</mtext> <mrow> <mtext>g</mtext> </mrow> <mtext>Op</mtext> </msubsup> </math></EquationSource> </InlineEquation> of the fabricated Cr<sub>2</sub>O<sub>3</sub>-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr<sub>2</sub>O<sub>3</sub>-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr<sub>2</sub>O<sub>3</sub>-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr<sub>2</sub>O<sub>3</sub>-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area.</p>

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Single oscillator modeling of chromium oxide-doped PMMA films and electrical properties of ITO/Cr2O3-doped PMMA/Ag systems for memory technology applications

  • 期刊论文

  • 发表日期：

    2025年2月11日

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  • Ahmed M. Nawar,
  • S. F. Mansour,
  • S. Mosaad,
  • Ahmed H. Ibrahim

摘要

Herein, chromium oxide (Cr2O3) was fabricated in nanopowder form, and Cr2O3-doped PMMA nanocomposite thin films were fabricated using the spin-coating technique (0.001 to 10 wt%). X-ray diffraction confirmed Cr2O3 powder is nanostructured, crystallizing in the trigonal R-3c space group with lattice parameters a = 4.9541 Å and c = 13.5882 Å, determined via Rietveld refinement. The Cr2O3-doped PMMA nanocomposite thin films exhibit an amorphous structure. The Williamson-Hall plots were utilized to estimate the average crystallite size and lattice strain of the refined XRD patterns and are equal to 14.12 ± 0.03 nm and 3×10-3, respectively. XPS and FESEM investigated the fabricated samples' molecular structure and morphological properties. The estimated energy gap, \({\text{E}}_{\text{g}}^{\text{Op}}\) E g Op of the fabricated Cr2O3-doped PMMA thin films varied from 3.629 ± 0.005 eV to 3.761 ± 0.004 eV with indirect transition and depended on the doping ratio. Cauchy, Sellmeier, and Forouhi-Bloomer mathematical models were used to parameterize the refractive index of the thin films of the Cr2O3-doped PMMA nanocomposite in the non-absorbing region. The intensity of the measured transmission, T%, through the fabricated ITO/Cr2O3-doped PMMA/ITO devices depends on the applied electric field, which is parallel to the direction of incident probe electromagnetic waves (450-1100 nm). The fabricated ITO/Cr2O3-doped PMMA/Ag Schottky devices elucidate (I-V) hysteresis loop at room temperature. The analyzed conduction mechanism in the forward biasing region for all devices showed a large self-electrical switching ratio equal to 108 at 2.1 Volts with a large memory window area.