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<p>ZnO-0.5&#xa0;mol%Bi<sub>2</sub>O<sub>3</sub>-<i>x</i> mol%MnCO<sub>3</sub>-0.1&#xa0;mol%Nb<sub>2</sub>O<sub>5</sub> (<i>x</i> = 0.0, 0.5, 1.0, 1.5, 2.0) varistor ceramics were fabricated by solid state sintering at a low temperature of 850&#xa0;℃. The effect of MnCO<sub>3</sub> doping on the microstructure and electrical properties of varistor ceramics was investigated in detail. Results reveal that the second phase Bi<sub>3</sub>NbO<sub>7</sub> is formed during the sintering process of varistor ceramics, and Bi, Nb and Mn elements segregate at the grain boundaries. The introduction of MnCO<sub>3</sub> restrains the growth of ZnO grain, and promotes the barrier height as well, resulting in the increment of switching field and breakdown strength. Moreover, the nonlinear coefficient monotonously increases to 52.87, and the leakage current density gradually declines to 2.08 μA/cm<sup>2</sup> with an increase of MnCO<sub>3</sub> content up to 2.0&#xa0;mol%. Besides, the dielectric constant and dielectric loss can be effectively reduced. This work provides a promising candidate material for producing ZnO-based varistor with high performance and low cost.</p>

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Microstructure and electrical properties in MnCO3 doped ZnO varistor ceramics sintered at low temperature

  • 期刊论文

  • 发表日期：

    2025年2月4日

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  • Jingjing Tian,
  • Jiayang Zhao,
  • Zixuan Xie,
  • Pengzhen Lu,
  • Jinjie Liang,
  • Heng Tian,
  • Yonghao Xu

摘要

ZnO-0.5 mol%Bi2O3-x mol%MnCO3-0.1 mol%Nb2O5 (x = 0.0, 0.5, 1.0, 1.5, 2.0) varistor ceramics were fabricated by solid state sintering at a low temperature of 850 ℃. The effect of MnCO3 doping on the microstructure and electrical properties of varistor ceramics was investigated in detail. Results reveal that the second phase Bi3NbO7 is formed during the sintering process of varistor ceramics, and Bi, Nb and Mn elements segregate at the grain boundaries. The introduction of MnCO3 restrains the growth of ZnO grain, and promotes the barrier height as well, resulting in the increment of switching field and breakdown strength. Moreover, the nonlinear coefficient monotonously increases to 52.87, and the leakage current density gradually declines to 2.08 μA/cm2 with an increase of MnCO3 content up to 2.0 mol%. Besides, the dielectric constant and dielectric loss can be effectively reduced. This work provides a promising candidate material for producing ZnO-based varistor with high performance and low cost.