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<p>Copper-plated contacts for silicon solar cells are an attractive alternative to traditional screen-printed (SP) silver, but Cu is the deep impurity energy level of Si, which increases the recombination rate. Therefore, a barrier layer is needed to prevent direct contact between Cu and Si, and there are unresolved problems in the long-term integrity of the copper-plated contact structure. In this work, by optimizing the process parameters of copper plating, the produced solar cells in this study had the following electrical properties: <i>J</i><sub><i>sc</i></sub> 40.61&#xa0;mA&#xa0;cm<sup>−2</sup>, <i>V</i><sub><i>oc</i></sub> 713.89&#xa0;mV, <i>FF</i> 83.87%, and <i>Eff</i> 24.32%. Due to improved uniformity, a greater aspect ratio, and a lower contact resistivity gate electrode, the efficiency is 0.11% higher than that of SP metallization. In addition, the ethylene–vinyl acetate decomposition of acetic acid in the damp heat environment corrodes the gate line, increasing the series resistance and reducing the power of the double glass PV modules by 1.78%. The electroluminescence (EL) measurements suggest that decrease in electrical parameters is a consequence of Cu corrosion caused by harmful products of the decomposed EVA laminating film. It exhibits greater stability when compared to the SP silver paste metallization PV modules, which is a significant reference point for lowering costs and raising production efficiency.</p>

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Study on excellent contact performance of double-sided copper-plated metallization

  • 期刊论文

  • 发表日期：

    2025年2月6日

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  • Zhao Wang,
  • Guanggui Cheng,
  • Haixia Liu,
  • Zigang Wang,
  • Kuiyi Wu,
  • Daming Chen,
  • Yifeng Chen,
  • Shaoyang Liu,
  • Jifan Gao,
  • Jianning Ding

摘要

Copper-plated contacts for silicon solar cells are an attractive alternative to traditional screen-printed (SP) silver, but Cu is the deep impurity energy level of Si, which increases the recombination rate. Therefore, a barrier layer is needed to prevent direct contact between Cu and Si, and there are unresolved problems in the long-term integrity of the copper-plated contact structure. In this work, by optimizing the process parameters of copper plating, the produced solar cells in this study had the following electrical properties: Jsc 40.61 mA cm−2, Voc 713.89 mV, FF 83.87%, and Eff 24.32%. Due to improved uniformity, a greater aspect ratio, and a lower contact resistivity gate electrode, the efficiency is 0.11% higher than that of SP metallization. In addition, the ethylene–vinyl acetate decomposition of acetic acid in the damp heat environment corrodes the gate line, increasing the series resistance and reducing the power of the double glass PV modules by 1.78%. The electroluminescence (EL) measurements suggest that decrease in electrical parameters is a consequence of Cu corrosion caused by harmful products of the decomposed EVA laminating film. It exhibits greater stability when compared to the SP silver paste metallization PV modules, which is a significant reference point for lowering costs and raising production efficiency.