<p>This study explores the fabrication and thermoelectric properties of Sb<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Te<sub>3</sub> thin films prepared using physical vapor deposition (PVD) with synthesized nano powders as source materials. Nano Sb<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Te<sub>3</sub> powders were synthesized via a hydrothermal method, yielding high-purity nanostructures with hexagonal crystal structures, as confirmed by X-ray diffraction (XRD). The nano powders were deposited onto substrates to create thin films approximately 100 nm thick, with scanning electron microscopy (SEM) confirming uniform morphology. Thermoelectric characterization revealed a Seebeck coefficient of 192 μV/K for Sb<sub>2</sub>Te<sub>3</sub> at room temperature, which increased to 380 μV/K after annealing. Bi<sub>2</sub>Te<sub>3</sub> exhibited an n-type Seebeck coefficient of −&#xa0;45 μV/K, which improved to −&#xa0;170 μV/K with annealing. Resistivity measurements demonstrated distinct electrical transport mechanisms for both materials, with Sb<sub>2</sub>Te<sub>3</sub> exhibiting metallic-like behavior at lower temperatures and Bi<sub>2</sub>Te<sub>3</sub> showing thermally activated conduction. The complementary thermoelectric properties of Sb<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Te<sub>3</sub> highlight their potential for use in high-efficiency p–n junction thermoelectric devices.</p>

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Fabrication and thermoelectric properties of nano Sb2Te3, Bi2Te3 thin films using PVD of synthesized nano powder

  • Mahmoud Rezaee Roknabadi,
  • Masoud Mollaee,
  • Somayyeh Garazhian

摘要

This study explores the fabrication and thermoelectric properties of Sb2Te3 and Bi2Te3 thin films prepared using physical vapor deposition (PVD) with synthesized nano powders as source materials. Nano Sb2Te3 and Bi2Te3 powders were synthesized via a hydrothermal method, yielding high-purity nanostructures with hexagonal crystal structures, as confirmed by X-ray diffraction (XRD). The nano powders were deposited onto substrates to create thin films approximately 100 nm thick, with scanning electron microscopy (SEM) confirming uniform morphology. Thermoelectric characterization revealed a Seebeck coefficient of 192 μV/K for Sb2Te3 at room temperature, which increased to 380 μV/K after annealing. Bi2Te3 exhibited an n-type Seebeck coefficient of − 45 μV/K, which improved to − 170 μV/K with annealing. Resistivity measurements demonstrated distinct electrical transport mechanisms for both materials, with Sb2Te3 exhibiting metallic-like behavior at lower temperatures and Bi2Te3 showing thermally activated conduction. The complementary thermoelectric properties of Sb2Te3 and Bi2Te3 highlight their potential for use in high-efficiency p–n junction thermoelectric devices.