Impact of K+/Bi3+ co-doping on microstructure and electrical properties of CaBi2Nb2O9 piezoelectric ceramics
摘要
Ca1−x(KBi)0.5xBi2Nb2O9 (x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, CBN-xKB) piezoelectric ceramics were synthesized by the traditional solid-phase sintering method. The influences of K+/Bi3+ co-doped CBN ceramics on the microstructure, electrical properties and high temperature resistivity were discussed. The results showed that the CBN ceramics with the appropriate amount of K+/Bi3+ co-doping were a single orthorhombic phase. The changes in intensities of the Raman peaks indicated that K+/Bi3+ co-doping decreased the concentrations of oxygen vacancies and reduced the lattice distortion, which improved the electrical properties of CBN ceramics with effect. When x = 0.06, the Ca0.94(KBi)0.03Bi2Nb2O9 ceramics obtained optimal properties with the piezoelectric coefficient d33 of 10.6 pC/N (twice as much as that of pure CBN), the high Curie temperature Tc of 924 °C, the remnant polarization Pr of 3.65 μC/cm2 and the dielectric loss tanδ of 1.79% at 600 °C. And the resistivity at elevated temperatures was also improved. After the annealing treatment, all component samples maintained more stable piezoelectric properties at 800 °C. It can be seen that K+/Bi3+ co-doped CBN ceramics would offer significant potential for applications in high temperature sensors and other fields.