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<p>The thermoelectric properties of In<sub>2</sub>O<sub>3</sub>-based materials have attracted extensive attention due to their potential applications in the field of energy conversion. The study focused on the correlation-based influence mechanism of aluminum (Al) doping on the thermoelectric properties of In<sub>2</sub>O<sub>3</sub>-based materials. Experimental investigations reveal several significant changes after Al doping. Firstly, the electrical conductivity shows a remarkable enhancement. This can be mainly attributed to the increase in carrier concentration. With the introduction of Al atoms into the In<sub>2</sub>O<sub>3</sub> lattice, more charge carriers are generated, facilitating the transport of electrons and thus improving the electrical conductivity. However, the absolute value of the Seebeck coefficient decreases. This alteration is closely related to the change in carrier concentration as well. The increased carrier concentration affects the thermoelectric power factor in a complex manner, resulting in a decline in the absolute value of the Seebeck coefficient. On the other hand, the thermal conductivity experiences a decrease. The doping-induced lattice distortion and scattering of phonons play crucial roles in suppressing the heat transfer, thereby reducing the thermal conductivity. Importantly, despite the changes in individual parameters, the dimensionless thermoelectric figure of <i>merit (ZT)</i> exhibits an improvement with the highest value of ~ 0.145 (973&#xa0;K). The combined effects of the increased electrical conductivity and the decreased thermal conductivity contribute to a more favorable ZT value. This enhancement indicates that Al doping is an effective approach to optimize the thermoelectric performance of In<sub>2</sub>O<sub>3</sub>-based materials, which provides valuable insights for the further design and development of high-performance thermoelectric materials for efficient energy conversion applications. The study deepens the understanding of the influence mechanism of doping on the thermoelectric properties of In<sub>2</sub>O<sub>3</sub>-based materials and offers a reference for related research in the future.</p>

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Correlation-based influence mechanism of aluminum doping on the thermoelectric properties of In2O3-based materials

  • 期刊论文

  • 发表日期：

    2025年2月3日

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  • Bo Feng,
  • Ying Xu,
  • Suoluoyan Yang,
  • Ruolin Ruan,
  • Rong Zhang,
  • Tongqiang Xiong,
  • Biyu Xu,
  • Zhipeng Zheng,
  • Guopeng Zhou,
  • Yang Zhang,
  • Kewei Wang,
  • Yin Zhong,
  • Yanhua Fan,
  • Xiaoqiong Zuo,
  • Jinhui Hu

摘要

The thermoelectric properties of In2O3-based materials have attracted extensive attention due to their potential applications in the field of energy conversion. The study focused on the correlation-based influence mechanism of aluminum (Al) doping on the thermoelectric properties of In2O3-based materials. Experimental investigations reveal several significant changes after Al doping. Firstly, the electrical conductivity shows a remarkable enhancement. This can be mainly attributed to the increase in carrier concentration. With the introduction of Al atoms into the In2O3 lattice, more charge carriers are generated, facilitating the transport of electrons and thus improving the electrical conductivity. However, the absolute value of the Seebeck coefficient decreases. This alteration is closely related to the change in carrier concentration as well. The increased carrier concentration affects the thermoelectric power factor in a complex manner, resulting in a decline in the absolute value of the Seebeck coefficient. On the other hand, the thermal conductivity experiences a decrease. The doping-induced lattice distortion and scattering of phonons play crucial roles in suppressing the heat transfer, thereby reducing the thermal conductivity. Importantly, despite the changes in individual parameters, the dimensionless thermoelectric figure of merit (ZT) exhibits an improvement with the highest value of ~ 0.145 (973 K). The combined effects of the increased electrical conductivity and the decreased thermal conductivity contribute to a more favorable ZT value. This enhancement indicates that Al doping is an effective approach to optimize the thermoelectric performance of In2O3-based materials, which provides valuable insights for the further design and development of high-performance thermoelectric materials for efficient energy conversion applications. The study deepens the understanding of the influence mechanism of doping on the thermoelectric properties of In2O3-based materials and offers a reference for related research in the future.