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<p>Ferroelectric polycrystalline Bi<sub>3.5</sub>Nd<sub>0.5</sub>Ti<sub>3</sub>O<sub>12</sub> (BNdT) thin films annealed at temperatures of 650&#xa0;℃, 700&#xa0;℃ and 750&#xa0;℃ were synthesized using a sol–gel method, and their self-powered ultraviolet (UV) photodetecting properties were comprehensively investigated. X-ray diffraction (XRD) was used to verify their layered perovskite crystal structure. The UV photodetection capabilities of the films were assessed under illumination at a wavelength of 365&#xa0;nm, revealing a high responsivity of 0.072&#xa0;mA/W and a detectivity of 1.55 × 10<sup>10</sup> Jones, underscoring their potential for high-sensitivity UV detection applications. The switchable ferroelectric photovoltaic characteristics exhibited by the BNdT films indicate their inherent potential for self-powered UV photodetection. Moreover, the self-powered photodetecting properties were interpreted based on the polarization-modulated Schottky barrier at the ferroelectric/electrode interfaces.</p>

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Self-powered ultraviolet photodetecting properties of ferroelectric Bi3.15Nd0.85Ti3O12 polycrystalline thin films

  • 期刊论文

  • 发表日期：

    2025年1月23日

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  • Jie Li,
  • Hongyan Qi,
  • Huaixing Wang,
  • Chu Dai,
  • Chunwu Liu,
  • Chuanhui Wang

摘要

Ferroelectric polycrystalline Bi3.5Nd0.5Ti3O12 (BNdT) thin films annealed at temperatures of 650 ℃, 700 ℃ and 750 ℃ were synthesized using a sol–gel method, and their self-powered ultraviolet (UV) photodetecting properties were comprehensively investigated. X-ray diffraction (XRD) was used to verify their layered perovskite crystal structure. The UV photodetection capabilities of the films were assessed under illumination at a wavelength of 365 nm, revealing a high responsivity of 0.072 mA/W and a detectivity of 1.55 × 1010 Jones, underscoring their potential for high-sensitivity UV detection applications. The switchable ferroelectric photovoltaic characteristics exhibited by the BNdT films indicate their inherent potential for self-powered UV photodetection. Moreover, the self-powered photodetecting properties were interpreted based on the polarization-modulated Schottky barrier at the ferroelectric/electrode interfaces.