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<p>This study reports the synthesis of tin (IV) oxide (SnO<sub>2</sub>) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO<sub>2</sub> were examined using XRD, SEM, TEM, and UV–Vis analysis. XRD analysis revealed that SnO<sub>2</sub> has a crystalline structure with an average crystallite size of 14.4&#xa0;nm. The optical band gap energy of SnO<sub>2</sub> was determined as 3.4&#xa0;eV using UV–Vis analysis. Additionally, the current–voltage (I–V) characteristics of the Au/SnO<sub>2</sub>/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO<sub>2</sub> nanomaterial on their electrical parameters. From the I–V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO<sub>2</sub>/n-Si device were determined to be 4.35 × 10<sup>4</sup> (at ± 2&#xa0;V), 1.96 × 10<sup>–9</sup>&#xa0;A, 1.57, and 0.81&#xa0;eV, respectively. For electro-optical characteristics of the SnO<sub>2</sub>/n-Si device, the I–V measurements were conducted under both visible light and UV light (365&#xa0;nm) conditions. The SnO<sub>2</sub>/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO<sub>2</sub>/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.</p>

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Microemulsion synthesis of SnO2 nanoparticles and their integration in Au/n-Si/Al device structure

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月17日

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  • Zeynep Orhan,
  • Elif Daş,
  • Gamze Bozkurt

摘要

This study reports the synthesis of tin (IV) oxide (SnO2) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO2 were examined using XRD, SEM, TEM, and UV–Vis analysis. XRD analysis revealed that SnO2 has a crystalline structure with an average crystallite size of 14.4 nm. The optical band gap energy of SnO2 was determined as 3.4 eV using UV–Vis analysis. Additionally, the current–voltage (I–V) characteristics of the Au/SnO2/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO2 nanomaterial on their electrical parameters. From the I–V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO2/n-Si device were determined to be 4.35 × 104 (at ± 2 V), 1.96 × 10–9 A, 1.57, and 0.81 eV, respectively. For electro-optical characteristics of the SnO2/n-Si device, the I–V measurements were conducted under both visible light and UV light (365 nm) conditions. The SnO2/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO2/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.