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<p>The effect of CeO<sub>2</sub> sintering aid on the microstructural and electrical properties of CaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> ceramics was studied. The addition of CeO<sub>2</sub> facilitates a reduction in the sintering temperature of CaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub>, improve the grain morphology, increase the relative density, and induce the <i>c</i>-axis oriented growth of some grains. The incorporation of some Ce ions into the B-sites of [NbO<sub>6</sub>] octahedra results in an increased tetragonal distortion, and therefore significantly affects the electrical properties of the ceramics. The sample with 0.6 wt% CeO<sub>2</sub> exhibits an optimal performance with a large remanent polarization (<i>P</i><sub>r</sub> = 18.5 μC/cm<sup>2</sup>) and a piezoelectric coefficient (<i>d</i><sub>33</sub> = 20.8 pC/N). The results indicate that adding CeO<sub>2</sub> as a sintering aid is an effective strategy for enhancing the performance of CaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> ceramics.</p>

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Enhanced piezoelectricity in CaBi2Nb2O9 high-temperature piezoelectric ceramics: low-temperature sintering and weak texturing

  • 期刊论文

  • 发表日期：

    2025年1月9日

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  • Z. P. Wang,
  • C. B. Pan,
  • L. H. Yin,
  • W. H. Song,
  • X. B. Zhu,
  • J. Yang,
  • Y. P. Sun

摘要

The effect of CeO2 sintering aid on the microstructural and electrical properties of CaBi2Nb2O9 ceramics was studied. The addition of CeO2 facilitates a reduction in the sintering temperature of CaBi2Nb2O9, improve the grain morphology, increase the relative density, and induce the c-axis oriented growth of some grains. The incorporation of some Ce ions into the B-sites of [NbO6] octahedra results in an increased tetragonal distortion, and therefore significantly affects the electrical properties of the ceramics. The sample with 0.6 wt% CeO2 exhibits an optimal performance with a large remanent polarization (Pr = 18.5 μC/cm2) and a piezoelectric coefficient (d33 = 20.8 pC/N). The results indicate that adding CeO2 as a sintering aid is an effective strategy for enhancing the performance of CaBi2Nb2O9 ceramics.