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<p>Thermal stability, toxicity, and sensitivity to moisture are major challenges associated with the long-term performance of perovskite-based solar cells. CeNiO<sub>3</sub> is a stable, lead free, and easy to fabricate perovskite material. It is currently being investigated for supercapacitor anode and photocatalytic applications due&#xa0;to its&#xa0;s stable structure&#xa0;and&#xa0;long&#xa0;cyclic stability. This study discovered that pure CeNiO3, with its 1.25&#xa0;eV bandgap, effectively absorbs a significant portion of the visible solar spectrum, and La-doping converts narrow bandgap CeNiO<sub>3</sub> into a wide bandgap semiconductor (4.77 and 4.85&#xa0;eV). Dielectric studies indicated reduced energy dissipation in La-doped samples, particularly the 10% La-doped CeNiO<sub>3</sub>, which exhibited minimal dissipation across all incoming frequencies and enhanced AC conductance at higher frequencies. This, coupled with the wide bandgap, makes La-doped CeNiO<sub>3</sub> a promising candidate for power electronics applications. The significant short-circuit current density and fill factor (FF) values of pure CeNiO<sub>3</sub> in ZnO/CeNiO<sub>3</sub>/PANI solar cell devices confirm effective light absorption and efficient conversion of incident photons into electrical carriers, resulting in an impressive 8.1% efficiency.</p>

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Exploring optical, dielectric, and photovoltaic properties of La-doped CeNiO3 perovskite

  • 期刊论文

  • 发表日期：

    2025年2月7日

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  • Zeeshan Zaheer,
  • Muhammad A. Shafique,
  • Zaheer Abbas

摘要

Thermal stability, toxicity, and sensitivity to moisture are major challenges associated with the long-term performance of perovskite-based solar cells. CeNiO3 is a stable, lead free, and easy to fabricate perovskite material. It is currently being investigated for supercapacitor anode and photocatalytic applications due to its s stable structure and long cyclic stability. This study discovered that pure CeNiO3, with its 1.25 eV bandgap, effectively absorbs a significant portion of the visible solar spectrum, and La-doping converts narrow bandgap CeNiO3 into a wide bandgap semiconductor (4.77 and 4.85 eV). Dielectric studies indicated reduced energy dissipation in La-doped samples, particularly the 10% La-doped CeNiO3, which exhibited minimal dissipation across all incoming frequencies and enhanced AC conductance at higher frequencies. This, coupled with the wide bandgap, makes La-doped CeNiO3 a promising candidate for power electronics applications. The significant short-circuit current density and fill factor (FF) values of pure CeNiO3 in ZnO/CeNiO3/PANI solar cell devices confirm effective light absorption and efficient conversion of incident photons into electrical carriers, resulting in an impressive 8.1% efficiency.