Scholarlink

<p>In this study, SiGe/Si superlattices films (SLs) with different tiers were epitaxially grown by reduced pressure chemical vapor deposition (RPCVD) on 300&#xa0;mm Si (001) substrate. Crystal quality of SiGe/Si SLs films (relaxation, surface roughness, interface characteristics and dislocation density) were quantitative evaluated by various characterization methods. A systematic investigation was conducted on the transition process of the SiGe/Si SLs films from full strain to relaxation state with increasing stacking layers. And, the variation trend of dislocation density and surface roughness with increasing stacking layers is studied. Additionally, we examined the changes in crystal quality and dislocation density of these SLs films after thermal annealing (20&#xa0;min, @700&#xa0;°C), and all the films exhibit higher strain relaxation by generating more misfit dislocations propagating in-plane. This study provides guidance and reference for the regulation of process parameters and the design of superlattice structure in vertically stacked DRAM.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Growth and characterization of SiGe/Si superlattice for vertically stacked DRAM

  • 期刊论文

  • 发表日期：

    2025年1月9日

查看全文
  • Hailing Wang,
  • Xiangsheng Wang,
  • Yanpeng Song,
  • Xiaomeng Liu,
  • Ying Zhang,
  • Xinyou Liu,
  • Guilei Wang,
  • Chao Zhao

摘要

In this study, SiGe/Si superlattices films (SLs) with different tiers were epitaxially grown by reduced pressure chemical vapor deposition (RPCVD) on 300 mm Si (001) substrate. Crystal quality of SiGe/Si SLs films (relaxation, surface roughness, interface characteristics and dislocation density) were quantitative evaluated by various characterization methods. A systematic investigation was conducted on the transition process of the SiGe/Si SLs films from full strain to relaxation state with increasing stacking layers. And, the variation trend of dislocation density and surface roughness with increasing stacking layers is studied. Additionally, we examined the changes in crystal quality and dislocation density of these SLs films after thermal annealing (20 min, @700 °C), and all the films exhibit higher strain relaxation by generating more misfit dislocations propagating in-plane. This study provides guidance and reference for the regulation of process parameters and the design of superlattice structure in vertically stacked DRAM.