Ferrimagnetism state in FeMn2O4-δ epitaxial films on MgO(100) substrate
摘要
FeMn2O4-δ epitaxial films were grown on a MgO (100) substrate by using molecular beam epitaxy (MBE) at low growth temperature from 100 to 300 °C in oxygen-cracked environment. The results shows that the structural properties of films are single crystalline with flat surface at growth temperatures of 200 °C. The tensile strain of films decrease as growth temperature increase which is confirmed by X-ray diffraction characterization. The optical band gaps of films are 3.44, 3.50, and 3.20 eV with growth temperatures of 100 °C, 200 °C, and 300 °C, respectively. In addition, the films possess magnetic properties in ferrimagnetic ordering at room temperature without any magnetic transition below this temperature; magnetization of films decreases as growth temperature increase. The results average magnetic moment per unit are estimated to be 3.72, 2.84, and 2.13 µB/f.u corresponding to 100 °C, 200 °C, and 300 °C of growth temperature. Our work provides a study on structural and magnetic properties of FeMn2O4-δ in thin film form, which has potential application in fabrication of spin-filter devices.