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<p>This paper researches ilmenite-type [(Mg<sub>1-<i>x</i></sub>Mn<sub><i>x</i></sub>)<sub>0.95</sub>Zn<sub>0.05</sub>]TiO<sub>3</sub> dielectrics synthesized by the solid-state reaction method and the influence of Mg<sup>2</sup>⁺ by Mn<sup>2</sup>⁺ on the physical characterization, such as microstructure, crystallization, Raman spectra, and microwave dielectric properties, was investigated systematically. The microstructures and phases of the synthesized dielectrics were meticulously analyzed using EDS, SEM, XRD, XPS, and Raman spectroscopy. Optimization of the process conditions revealed that sintering temperature and time significantly impact the microwave dielectric properties, and further tuning Mn<sup>2</sup>⁺ doping concentration x can obtain the wide-range quality factor. The optimal dielectric properties for [(Mg<sub>0.8</sub>Mn<sub>0.2</sub>)<sub>0.95</sub>Zn<sub>0.05</sub>]TiO<sub>3</sub> were achieved when sintered at 1250&#xa0;°C for 3&#xa0;h, including a permittivity (<i>ε</i><sub><i>r</i></sub>) of approximately 17.4, a quality factor (<i>Qf</i>) of around 180,000&#xa0;GHz, and a temperature coefficient of resonance frequency (τ<sub><i>f</i></sub>) of about −&#xa0;58&#xa0;ppm/°C. Due to its substantially reduced thermal budget and low-loss microwave dielectric properties, the proposed dielectrics demonstrate a high potential for applications in manufacturing high-quality substrates for high-frequency devices in 5G and beyond 5G communication systems.</p>

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Synthesis and characterization of low-thermal-budget ilmenite-type [(Mg1-x Mnx)0.95Zn0.05]TiO3 (x = 0–0.4) microwave dielectrics for high-frequency applications

  • 期刊论文

  • 发表日期：

    2024年12月31日

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  • Yao-Chin Wang,
  • Cheng-Che Ho,
  • Chun-Hong Chen,
  • Che-Hao Liao,
  • Yong-Tai Xu,
  • Po-Cheng Chen,
  • Chien-Sheng Huang,
  • Shih-Hung Lin

摘要

This paper researches ilmenite-type [(Mg1-xMnx)0.95Zn0.05]TiO3 dielectrics synthesized by the solid-state reaction method and the influence of Mg2⁺ by Mn2⁺ on the physical characterization, such as microstructure, crystallization, Raman spectra, and microwave dielectric properties, was investigated systematically. The microstructures and phases of the synthesized dielectrics were meticulously analyzed using EDS, SEM, XRD, XPS, and Raman spectroscopy. Optimization of the process conditions revealed that sintering temperature and time significantly impact the microwave dielectric properties, and further tuning Mn2⁺ doping concentration x can obtain the wide-range quality factor. The optimal dielectric properties for [(Mg0.8Mn0.2)0.95Zn0.05]TiO3 were achieved when sintered at 1250 °C for 3 h, including a permittivity (εr) of approximately 17.4, a quality factor (Qf) of around 180,000 GHz, and a temperature coefficient of resonance frequency (τf) of about − 58 ppm/°C. Due to its substantially reduced thermal budget and low-loss microwave dielectric properties, the proposed dielectrics demonstrate a high potential for applications in manufacturing high-quality substrates for high-frequency devices in 5G and beyond 5G communication systems.