F and Ga co-doped ZnO transparent conducting films deposited by ultrasonic spray pyrolysis technique
摘要
In this study, F- and Ga-co-doped ZnO (FGZO) films were prepared at different substrate temperatures (Ts) using ultrasonic spray pyrolysis. The films deposited with an acetate precursor exhibited a polycrystalline structure with a preferential (100) orientation. The carrier concentration (n) significantly increased and then slightly decreased when the temperature exceeded 460 °C. The changes in n were due to the donor doping functions of F and Ga and the concentration changes of the O vacancies and Zn interstitial defects regulated by Ts. The FGZO film had an optimal photoelectric property with Ts of 460 °C, a thickness of 1126 nm, a carrier concentration of 3.03 × 1020 cm−3, a mobility of 16.19 cm2/Vs, a resistivity of 1.27 × 10−3 Ω⋅cm, an average transmittance of 86.33% in the spectral region of 400–1400 nm, and figure of merit of 5.35 × 103 Ω−1⋅cm−1.