The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer
摘要
The transparent device in ultrathin NiO layer modified CuI/InGaZnO4 pn junction is prepared via sputtering-in situ iodization method. The CuI/NiO/InGaZnO4 exhibits transmittance of ~ 85–90%, photovoltaic enhancement of ~ 1.3 × 103-folds, stable output in 15 days. It can be mainly attributed to the ultrathin NiO layer. Besides appropriate Fermi level can alleviate potential gradient, the ultrathin NiO layer, with surface optimization and p-type carrier injection via Cu+/Cu2+, Ni2+/Ni3+-interstitial oxygen synergism, as well as high transparency by wide band gap, can improve the photo-generated carrier kinetic equilibrium for achieving PCE-transparency balance, while exhibiting good stability via the all inorganic structures, making them being competitive in transparent devices.