Conventional and unidirectional growth of yttrium-doped sulphamic acid single crystals for NLO applications

In the present work, we report a rare-earth-doped Sulphamic acid single crystal successfully grown by the Slow Evaporation Solution (SEST) and Unidirectional Techniques (UD). Powder and single crystal XRD studies validated the purity and structure of the title compound. EDAX analysis provides a detailed look at the elements present in the crystal. FTIR study showed functional groups were presented within the Y: SA crystal of SEST and UD, respectively. UV–Visible spectral studies reveal the grown SEST and UD crystals 3.064 and 5.175 eV wide band gap and low absorption (cutoff wavelengths are 301 and 214 nm). The refractive index of the SEST and UD method grown crystals was measured to be 1.3871 and 1.4283 using a Metricon prism coupler. In the SEST and UD technique-grown crystals, the dielectric constant, loss and ac conductivity were examined as a function of frequency with different temperatures. The mechanical strength was assessed using the Vickers microhardness test for SEST and UD-grown Y: SA crystals. Thermal analysis was conducted on the grown crystals. The NLO third-order susceptibility was measured using the Z-scan technique. The susceptibility was calculated for both SEST (5.753 × 10^–8 esu) and UD (6.898 × 10^–8 esu) grown Y: SA single crystals. The UD-grown crystal exhibits higher third-order susceptibility in contrast to the SEST technique-grown crystal. The Yttrium-doped Sulphamic acid single crystal is crucial for NLO device applications.