Fabrication of phosphorus-doped g-C₃N₄/SnS nanocomposite photocatalysts for degradation of Rhodamine B under light emitting diode irradiation

In this study, phosphorus doped g-C₃N₄/SnS composite photocatalysts with enhanced Light Emitting Diode (LED)-induced photocatalytic activity were prepared via thermal polymerization followed by chemical deposition method. The phase-pure SnS in the composites was guaranteed with the addition of metallic tin in the preparation process. The SnS nanoparticles were well dispersed on the surface of P-CN nanosheets in the composite. The fabricated P-g-C₃N₄/SnS nanocomposites displayed better photocatalytic ability towards Rhodamine B degradation under LED light compared with those of a single component. It was found that the photocatalytic performance of P-g-C₃N₄/SnS composites was directly related to the SnS amount. As the mass ratio of SnS:P-g-C₃N₄ was 10:90, the obtained composite presented the best photocatalytic activity, which was 2.01 and 10 times more than that of single P-g-C₃N₄ and SnS, respectively. The improved photocatalytic activity can be attributed to the enhanced visible light absorption capacity and the highly efficient separation of photoelectron-hole pairs caused by the Z-scheme charge transfer mode.