Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Understanding how electron conduction works in nanoscale devices such as nanowire-based devices is crucial for proceeding the evolution of next-generation nano-size devices. Especially, AlGaN/GaN devices were operated with lower leakage currents and reduced power consumption. In this work, the temperature dependency of drain current (I_ds) and gate voltage (V_gs) characteristics in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistors (WGTs) produced using a top-down technique is examined in the temperature range of 100 – 300 K in steps of 50 K. With increasing temperature at gate voltage nearly equal to evolution voltage (i.e., − 3 V), the current passes via the two-dimensional electron gas (2-DEG) channel and begins to conduct, but the GaN channel stays off–state. These behaviors are explained to be the result of impurity and phonon scattering mechanisms in the surface and core of the horizontally aligned trapezoidal-shaped AlGaN/GaN nanowires.