Design and production of mesh patterned photoelectrode with maskless laser lithography and device performance of perovskite derived/ZnO NRAs based photodetector

This study reports the design and fabrication of environmentally friendly, portable, robust, and stable self-powered photoelectrochemical photodetector (PEC-PD) devices based on the heterojunction of ZnO nanorod arrays (NRA) in a mesh pattern and inorganic halide perovskites (IHP). First, the effects of distance between the center of lines in a mesh pattern on the material properties and device performance were revealed. The mesh patterned ZnO NRAs-based PEC-PD device exhibited a fast response time (τ_rise/τ_decay = 100/75 ms) under UV-light illumination with 367 nm of wavelength at no applied bias. The best-performing mesh pattern was then used as a sub-layer for lead-based CsPbBr₃-CsPb₂Br₅ dual-phase and lead-free Cs₂AgBiBr₆ double perovskite to construct self-powered p–n junction and PEC-PD devices. Upon the deposition of Cs₂AgBiBr₆, the maximum photocurrent value was enhanced about 13.65 times as compared to mesh patterned pristine ZnO NRAs under AM 1.5 illumination at + 5 V of applied potential. Responsivity (R_S) and Detectivity (D*) values of the mesh patterned pristine ZnO NRAs-based PD have been increased from 0.24 mAW⁻¹ and 3.0 × 10⁸ Jones to 3.08 mAW⁻¹ and 7.63 × 10⁸ Jones with Cs₂AgBiBr₆ layer, respectively. Furthermore, 69.18 mAW⁻¹ of R_S and 1.71 × 10¹⁰ Jones of D* value have been observed at 382 nm wavelength and + 5 V for mesh patterned ZnO NRAs/Cs₂AgBiBr₆ photoelectrode.