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Optimization of structural, electrical, and magnetic properties of the solution-processed IZO MOSFET adopting spin coating technique and its performance

  • S. Lephe,
  • S. M. Gifrin Fredik Raj,
  • S. Janaki,
  • C. Jamina,
  • S. Jerome Das,
  • S. Sahaya Jude Dhas,
  • L. Arun Jose

摘要

Of late, there has been a tremendous surge in the development of field-effect transistors of various kinds because of their versatile nature of applications in the frontier fields of science and technology. Among them, metal oxide semiconducting field-effect transistors (MOSFET) offer cutting-edge technology in a cost-efficient way of fabricating the device, which focuses on enlarged active area and high area efficiency that could be achieved using simple fabrication processes. The top contact-bottom gate approach has been chosen for the fabrication of an Indium Zinc Oxide MOSFET utilizing silver (Ag) as the source and drain materials. High k-dielectric layer Al2O3 has been deposited onto the n-type phosphorus-doped silicon substrate, which functions as a gate layer. The fabrication process is entailed with the solution processing technique along with the spin coating process. Electrical characterization on the IZO MOSFET shows promising results in the field-effect mobility of 21.37 cm2 V−1 S−1, a subthreshold slope of 0.181 V/decade, and a threshold voltage of 1.2608 V, respectively. The electrical characterization was considered under different atmospheres like dark and daylight showcasing the photoresponsivity which leads to the possible potential for optoelectronic devices. Transport properties of the fabricated IZO MOSFET have been determined by Hall measurements which indicate an electron density of 0.343 × 1023 cm−3 as well as an electron mobility of 2.305 × 10−4 cm2 eV−1 S−1. The structural analyses have been investigated using X-ray diffraction and X-ray photoelectron spectroscopic techniques which could confirm the composition and the film quality of the fabricated materials on the substrate. Surface morphology and structural characterization of the thin film have been studied using SEM and AFM studies. Major applications of IZO MOSFET include power electronics such as power supplies, inverters, and motor control systems.