Analysis of interface states in Zn/p-NiO Schottky barrier diode

A Schottky barrier diode (SBD) based on p-NiO thin film and Zn metal has been fabricated on a Pt/Si substrate using the RF sputtering technique. To get information regarding the interface trap states, a thorough and methodical analysis of the variation of conductance (G) with frequency and capacitance with voltage is carried out. The Zn/p-NiO SBD’s conductance-frequency (G_s-ω) properties have been used to calculate the variation of density of states (at the interface) with energy along with relaxation time. The energy band alignment of the Zn metal and p-NiO semiconducting layer are presented in both the isolating and contact modes respectively. The characteristic parameters obtained for the Zn/NiO Schottky barrier diode (SBD) are found to be very low as compared to the given results in the literature, which becomes the essential condition for designing devices of fast speed.