Electric properties and effect on temperature dependence of 5mol% BiScO₃-doped 0.05Pb(Mn_1/3Sb_2/3)O₃–Pb(Zr_1−xTi_x)O₃

Temperature stability of the piezoelectric ceramics is critical to its performance in high-power devices. In this research, 5 mol% BiScO₃ (BS) is introduced into 0.05Pb(Mn_1/3Sb_2/3)O₃–Pb(Zr_1−xTi_x)O₃ system. The morphotropic phase boundary (MPB) has been re-located by shifting Zr/Ti ratio systematically for the piezoceramic. Optimal piezoelectric properties with piezoelectric coefficient d₃₃ of 341 pC/N, electromechanical coupling factor (k_p) of 0.51, and mechanical quality factor Q_m value of 859 are obtained in MPB compositions of 0.05BiScO₃–0.05Pb(Mn_1/3Sb_2/3)O₃–0.9Pb(Zr_45.5Ti_54.5)O₃ ceramic at room temperature. Furthermore, the addition of BiScO₃ effects profoundly on the temperature dependence of the piezoelectric and ferroelectric properties. Comparing to common Pb(Zr, Ti)O₃-based piezoceramic, the BS-doped ceramic presents elevating ferroelectric polarization with temperature up to 200 °C, as well as stabilized d₃₃, k_p, and Q_m values from room temperature to 120 °C.