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Ferromagnetism, bandgap, and impedance analysis of Mn-doped SnO2 synthesized by single-step wet chemical approach

  • Bushra Parveen,
  • Mahmood-ul- Hassan,
  • Ghulam Ali,
  • Abdul Ghafar Wattoo,
  • Asghar Ali,
  • Saira Riaz,
  • Shahzad Naseem,
  • Zhenlun Song

摘要

Doped semiconductors are more advantageous than pure semiconductors, because doping of a semiconductor can tune electrical conductivity and optical bandgap engineering that allows flexible designs of microelectronic and optoelectronic devices, respectively. In the present work, pure and Mn-doped SnO2 nanocrystallites have been prepared using single-step wet chemical method calcined at 500 °C and 650 °C to investigate structural, optical, impedance, and ferromagnetic properties. X-ray diffraction confirmed single-phase Mn-doped SnO2, and NEXAFS spectra further revealed + 2 oxidation state of Mn ions in SnO2. The surface morphology depicted densely packed grains and optical spectra showed Mn and temperature-dependent variation of bandgaps. While dielectric and impedance study disclosed frequency response and dominance of grains resistance. Further, conduction mechanism and room temperature ferromagnetism were improved with doping and sintering temperature. Hence, prepared compounds are attractive for frequency-related devices and data storage applications.