Investigating the influence of RF power on the photo-detection capabilities of SnS thin films fabricated via RF magnetron sputtering

Tin sulfide (SnS) thin films were prepared using radio-frequency (RF) magnetron sputtering at varying RF sputtering power. The influence of RF power on the structural, optical, morphological, and photo-sensing properties of deposited SnS films were analyzed. X-ray diffraction confirmed the formation of polycrystalline SnS films with an orthorhombic crystal structure. The crystallinity in the samples was observed to be improved with increased RF power. A compact and smooth morphology of the fabricated SnS films were observed using Field-emission scanning electron microscopy (FE-SEM). Energy-dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) analysis confirmed a stoichiometric elemental chemical composition of the SnS. The optical bandgap decreased from 1.55 to 1.32 eV with increased RF power due to increased film thickness and crystallite size. The SnS-based photodetectors demonstrated stable photoresponse at 150 W RF power, with excellent photoresponsivity, photodetectivity, and rapid rise and decay times.