The outcomes of Zn doping on the properties of CuO thin films prepared via modified SILAR method and its impact on the performance of CuO-based solar cells using Cd0.4Zn0.6S-ETL and Spiro-OMeTAD-HTL
摘要
Doping is a highly effective tool for modifying the properties of semiconductor thin films. This study quantitatively examines the effect of zinc (Zn) doping on the physical properties of copper oxide (CuO) thin films prepared using a modified SILAR method. The crystalline structure, morphology and optical properties of the obtained samples were further characterized using X-ray diffraction (XRD), scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDX), and UV–visible spectrometry. XRD analysis confirmed the inclusion of Zn into the CuO crystal lattice without altering its monoclinic structure, and no secondary phases such as Cu