Carrier transport mechanisms and photovoltaic performance of Ag/MoO_x/Ag/MoO_x/n-Si/C₆₀/Al heterojunction solar cell

Silicon heterojunction (SHJ) technology marks a notable development in the photovoltaic sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is characterized by the formation of a heterojunction between crystalline silicon (c-Si) and carrier-selective materials, which are not necessarily based on intrinsic/doped a-Si:H. In this research, a transparent conductive multilayer structure consisting of MoO_x/Ag/MoO_x is utilized on the front illuminated side as hole-selective contacts, while a metal/organic polymer Al/C₆₀ is employed as a full-area rear electron-selective contact. This configuration results in an Ag/MoO_x/Ag/MoO_x/n-Si/C₆₀/Al heterojunction solar cell. The device was extensively investigated electrically under varying temperatures using techniques such as impedance spectroscopy, capacitance–voltage, and current–voltage measurements in dark conditions. Furthermore, the SHJ solar cell achieved an efficiency of 7.8% under 1 sun illumination, demonstrating its potential in the field of photovoltaics. These findings underscore the potential of this multilayer structure to enhance SHJ solar cell performance, marking a step forward in photovoltaic technology with implications for more efficient and cost-effective solar energy solutions.