Temperature effects on Cadmium Selenide semiconductor-sensitized solar cells with SnO2 deposition as electron transport layer
摘要
This research investigates the influence of temperature on the performance of Cadmium Selenium (CdSe) semiconductor-sensitized solar cells (SSSCs) with tin oxide (SnO2) deposition. CdSe thin films were synthesized at different temperatures (room temperature, 55 and 70 °C) and characterized for their optical and structural properties. The results reveal temperature-dependent variations in the bandgap energy and crystal structure of CdSe, with higher temperatures leading to a red shift in absorption spectra and increased crystallinity. The CdSe-coated SnO2 films showed enhanced nanoparticle density at higher bath temperatures, indicating improved particle binding and aggregation. Moreover, the elemental analysis confirmed the successful loading of CdSe onto SnO2 substrates without impurities. Solar cells constructed with these materials exhibited temperature-dependent efficiency, with maximum efficiency achieved at room temperature due to optimal bandgap characteristics and reduced recombination rates. The solar cell with the optimal SnO2:(FTO)/SnO2/CdSe/CuS nanostructure array electrode produced a short-circuit current density of 4.155 mA/cm2 and a power conversion efficiency of 0.26% when exposed to one sun's rays. These findings suggest that temperature control during CdSe synthesis plays a crucial role in optimizing the performance of SSSCs, highlighting the importance of understanding temperature effects in semiconductor-based solar cell technologies.