High-performance TiO₂/perovskite solar cell based GO as hole transport layer

Setting the electron transport layer (ETL) is an active technique to enhance the PCE for perovskite solar cell and restrain their hysteresis. In this work, we study that GO incorporating TiO₂ can improve the efficiency and decrease hysteresis. As graphene oxide has an effective structure and lattice parameters comparable to those of the perovskite via calculation emphasized. According to the incorporating GO, the doping perovskite production results in a thick and regular active layer with good crystallinity and low density of trap, which can decrease the interfacial charge accumulation and recombination of carrier. Consequently, the fabricated device ITO/Bl-TiO₂/3wt.% rGO-TiO₂/(FAPbI₃)_0.6(MAPbBr₃)_0.4/spiro-MeTAD/Ag disposition showed conversion solar energy % η = 20.14 with fill factor (FF) of 1.176, short circuit current density (Jsc) of 24.06 mA/cm² and open circuit voltage (Voc) 0.712 V. The results indicated that the efficiency is higher than titanium oxide (18.42%) and other prepared GO-TiO₂ composite nanofibers based ETMs.