Rapid oxidation of semiconductors at room temperature with a basic plasma cleaner

This paper shows how a simple modification of the electrodes in a basic commercial plasma cleaner allowed the oxidation of compound semiconductors (GaAs) and Si at room temperature. We explained the oxidation of the semiconductor surface by the participation of aluminum atoms evaporated from the electrode surface in the discharge, which resulting in additional ultraviolet (UV) radiation from the plasma. The UV radiation not only increases the decomposition of oxygen molecules adsorbed on the surface but also results in photoionization of GaAs with the formation of Ga and As ions at the oxide–GaAs interface. In addition to obtaining oxides on semiconductor surfaces, the modified device proved to be an effective tool for etching amorphous carbon films.