A new strategy to optimize the energy storage performance of the amorphous Sr_0.925Bi_0.05TiO₃-based thin films by regulating the BiMg_0.5Ti_0.5O₃ concentration

Low-temperature amorphous thin films with excellent energy storage properties play a crucial role in silicon-based microelectronic applications. The (1-x)Sr_0.925Bi_0.05TiO₃-xBiMg_0.5Ti_0.5O₃ (SBT-BMT) (x = 0, 0.1, 0.2, 0.3) amorphous films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition in order to achieve high energy storage performance. The X-ray diffractometer results show that amorphous films were successfully fabricated. The addition of BMT can results in a reduction of the crystallization temperature for the SBT film, and this can be used to obtain an critical amorphous state for the 0.9SBT-0.1BMT film, where the dielectric constant increases significantly and the leakage current is the minimum. The final 0.9SBT-0.1BMT film exhibited a recoverable energy storage density of 32 J/cm³ and an energy storage efficiency of 78% at an electric field of 4097 kV/cm. Furthermore, the energy storage performance remained stable over the temperature range of 20 ~ 200 °C, the frequency range of 2 ~ 10 kHz, and even after 10⁷ electrical cycles. It is expected to provide new strategy to optimize the energy storage performance of dielectric capacitors.