Significant advancements in passivating crystalline silicon surfaces achieved through the implementation of metal-doped zinc oxide layers

A thorough investigation was undertaken to compare ZnO nanostructured films doped with transition metals (M = Fe, Cu, and Cr) and their functional characteristics, with a specific focus on their potential applications in passivating silicon (Si) solar cells. Through a co-precipitation and spin coating process, both pure and M-doped ZnO nanostructured films were synthesized. Structural analyses revealed the presence of hexagonal wurtzite formation in all films. Reflectivity and lifetime measurements indicated an improvement in both parameters for doped ZnO on Si surfaces. Photocurrent density measurements exhibited a range from 2.5 µA/cm² for pristine ZnO to 25, 8, and 19 µA/cm² for Fe, Cu, and Cr-doped samples, respectively, showcasing distinct variations in performance. These compelling results position the coated layers as promising candidates for cutting-edge optoelectronic applications.